<hardware, storage> A technique used to support faster
sequential access to DRAM by allowing any number of accesses
to the currently open row to be made after supplying the row
address just once.
The RAS signal is kept active, and with each falling edge
of the CAS\ signal a new column address can be supplied
and the corresponding bits can be accessed. This is faster
than a full RAS-CAS cycle because only the shorter Column
Access Time needs to be obeyed.
Note that strictly speaking such a DRAM is not a true random
access memory since accesses to the open row are faster than
to other locations.
EDO RAM is replacing Page Mode DRAM in many new
microcomputers.
[Is "Fast Page Mode" the same as "Page Mode"?]
(1996-10-06)
Nearby terms:
pagelet « page mode « Page Mode DRAM « Page Mode Dynamic Random Access Memory » page out » pager » paging
